The measurement of thermal impedance of light-emitting diodes, transistors and other semiconductor devices

The measurement of the thermal resistance of LEDs, transistors and other semiconductor devices

We produce and sale a devices designed by Ulyanovsk branch of the Institute of Radio Engineering and Electronics RAS and we offer a devices for measuring thermal impedance of semiconductor diodes and transistors (bipolar, the MOSFET and IGBT), thyristors, transistor modules, LED arrays, solar panels, etc.

Devices implemented in two design variants, differing basic specifications and designed to measure the thermal impedance of the different objects:

Rth Meter - diodes, transistors, thyristors, transistor modules, etc.

LED Meter - for LEDs, LED arrays, solar panels, etc.

Specifications Rth Meter

Thermal resistance modulus range - from 0.02 to 100 K / W
Maximum heating current - 20 A
Maximum voltage on the DUT - 5 V
Modulation frequency of the heating power - 0.01 - 1000 Hz
Measurement error of the thermal impedance modulus - <3%
Interface - USB
Power - 220 V
Power consumption - less than 300 W
Dimensions, mm - 440x200x120
weight - 5.5 kg.

Specifications LED Meter

Thermal resistance modulus range - from 0.02 to 100 K / W
maximum heating current - 5000 mA
Maximum voltage on the DUT - 50 V
Modulation frequency of the heating power - from 0.01 to 1000 Hz
Measurement error of the thermal impedance modulus - 3%
Interface - USB
Power - 220 V
Power consumption - no more than 300 W
Dimensions, mm - 420x370x170
Weight - 7 kg.

Scope: input or output control of thermal parameters of semiconductor devices at the enterprises producing components and power electronics devices and LED products.

The equipment uses original principle of measuring thermal impedance, based on passing through the electrical impulses of the heating current object with PWM carried out harmonically and measuring the corresponding change of temperature pn-junction relative to the case or the environment . Based on calculations of amplitudes and phases of the fundamental harmonics of the heating power and the thermal transition temperature is determined by the impedance modulus and phase shift between the temperature and the heating capacity.

Features:
The device has the ability to automatically measure thermal impedance dependence on frequency, which allows to determine the components of thermal resistance of all parts of the thermal path: p-n-junction - heat - case - radiator - environment.

We are ready to make test measurements of your samples for free and send you the results of the measurements for a decision on whether to purchase the device.

Any additional questions can be asked:

Project Manager - Vitaly Smirnov: smirnov-vi@mail.ru

Director UV IRE them. VA Kotelnikov RAS - Sergeev Vyacheslav Andreyevich, ufire@mv.ru

The samples for test measurements can be sent to the address:

432071, Ulyanovsk, st. Goncharova 48/2, UFIRE VA Kotelnikov RAS